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Le informazioni sulla didattica, sulla ricerca e sui compiti istituzionali riportate in questa pagina sono certificate dall'Ateneo; ulteriori informazioni, redatte a cura del docente, sono disponibili sulla pagina web personale e nel curriculum vitae indicati nella scheda.
Informazioni sul docente
DocenteIelmini Daniele
QualificaProfessore ordinario a tempo pieno
Dipartimento d'afferenzaDipartimento di Elettronica, Informazione e Bioingegneria
Settore Scientifico DisciplinareING-INF/01 - Elettronica
Curriculum VitaeScarica il CV (285.17Kb - 30/04/2019)
OrcIDhttps://orcid.org/0000-0002-1853-1614

Contatti
Orario di ricevimento
DipartimentoPianoUfficioGiornoOrarioTelefonoFaxNote
Elettronica e Informazione, via Golgi 40 (Ed. 16)----VenerdìDalle 10:00
Alle 12:00
0223996120----
E-maildaniele.ielmini@polimi.it
Pagina web redatta a cura del docentehttp://www.dei.polimi.it/personale/docentidettaglio.php?id_docente=120&id_sezione=&lettera=I&idlang=

Fonte dati: RE.PUBLIC@POLIMI - Research Publications at Politecnico di Milano

Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2020 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Articoli su riviste
Memristive and CMOS Devices for Neuromorphic Computing (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2019 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Articoli su riviste
Recommended Methods to Study Resistive Switching Devices (Mostra >>)
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices (Mostra >>)
Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks (Mostra >>)
Solving matrix equations in one step with cross-point resistive arrays (Mostra >>)
A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory (Mostra >>)
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks (Mostra >>)
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling (Mostra >>)
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling (Mostra >>)
Stochastic Memory Devices for Security and Computing (Mostra >>)
Emerging neuromorphic devices (Mostra >>)
Contributi su volumi (Capitolo o Saggio)
Brain-Inspired Memristive Neural Networks for Unsupervised Learning (Mostra >>)
Neuromorphic computing with resistive switching memory devices (Mostra >>)
Contributo in Atti di convegno
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing (Mostra >>)
Computing of temporal information in spiking neural networks with ReRAM synapses (Mostra >>)
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices (Mostra >>)
Fast solution of linear systems with analog resistive switching memory (RRAM) (Mostra >>)
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage (Mostra >>)
Low-energy inference machine with multilevel HfO2 RRAM arrays (Mostra >>)
Monte Carlo model of resistance evolution in embedded PCM with Ge-rich GST (Mostra >>)
Energy-efficient continual learning in hybrid supervised-unsupervised neural networks with PCM synapses (Mostra >>)
Phase-change memories (PCM)-Experiments and modelling: General discussion (Mostra >>)
Valence change ReRAMs (VCM) - Experiments and modelling: General discussion (Mostra >>)
Synaptic and neuromorphic functions: General discussion (Mostra >>)
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2018 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Articoli su riviste
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices (Mostra >>)
Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks (Mostra >>)
Analytical Modeling of Organic-Inorganic CH3 NH3 PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition (Mostra >>)
In-memory computing with resistive switching devices (Mostra >>)
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity with RRAM Synapses (Mostra >>)
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime (Mostra >>)
Random number generation by differential read of stochastic switching in spin-transfer torque memory (Mostra >>)
Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch (Mostra >>)
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses (Mostra >>)
Logic Computing with Stateful Neural Networks of Resistive Switches (Mostra >>)
Contributo in Atti di convegno
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks (Mostra >>)
Brain-inspired recurrent neural network with plastic RRAM synapses (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2017 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Articoli su riviste
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity (Mostra >>)
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications (Mostra >>)
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices (Mostra >>)
Contributi su volumi (Capitolo o Saggio)
Electrical transport in crystalline and amorphous chalcogenide (Mostra >>)
Contributo in Atti di convegno
Brain-inspired neuromorphic computing with phase change memory (PCM) synapses (Mostra >>)
Modeling-based design of brain-inspired spiking neural networks with RRAM learning synapses (Mostra >>)
Attractor networks and associative memories with STDP learning in RRAM synapses (Mostra >>)
Brevetti
CIRCUITO DI RISOLUZIONE DI PROBLEMI MATEMATICI COMPRENDENTE ELEMENTI RESISTIVI (Mostra >>)
Device and method for generating radom numbers (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2016 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Articoli su riviste
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices (Mostra >>)
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses (Mostra >>)
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM (Mostra >>)
Bipolar switching in chalcogenide phase change memory (Mostra >>)
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory (Mostra >>)
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) (Mostra >>)
Contributi su volumi (Capitolo o Saggio)
Introduction to Nanoionic Elements for Information Technology,” in Resistive switching – from fundamental redox-processes to device applications (Mostra >>)
Universal Switching Behavior,” in Resistive switching – from fundamental redox-processes to device applications (Mostra >>)
Contributo in Atti di convegno
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability (Mostra >>)
Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-Time unsupervised machine learning (Mostra >>)
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio (Mostra >>)
Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity (Mostra >>)
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory (Mostra >>)
Bipolar switching operation in phase change memory devices for high temperature retention (Mostra >>)
Brevetti
Dispositivo e metodo per generare numeri casuali (Mostra >>)
Curatela di volumi scientifici
Resistive switching – from fundamental redox-processes to device applications (Mostra >>)
manifesti v. 3.2.0 / 3.2.0
Area Servizi ICT
27/01/2020