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Le informazioni sulla didattica, sulla ricerca e sui compiti istituzionali riportate in questa pagina sono certificate dall'Ateneo; ulteriori informazioni, redatte a cura del docente, sono disponibili sulla pagina web personale e nel curriculum vitae indicati nella scheda.
English
Informazioni sul docente
DocenteIelmini Daniele
QualificaProfessore ordinario a tempo pieno
Dipartimento d'afferenzaDipartimento di Elettronica, Informazione e Bioingegneria
Settore Scientifico DisciplinareING-INF/01 - Elettronica
Curriculum VitaeScarica il CV (361.15Kb - 13/01/2022)
OrcIDhttps://orcid.org/0000-0002-1853-1614

Contatti
Orario di ricevimento
DipartimentoPianoUfficioGiornoOrarioTelefonoFaxNote
Elettronica e Informazione, via Golgi 40 (Ed. 16)----VenerdìDalle 10:00
Alle 12:00		0223996120----
E-maildaniele.ielmini@polimi.it
Pagina web redatta a cura del docentehttp://www.dei.polimi.it/personale/docentidettaglio.php?id_docente=120&id_sezione=&lettera=I&idlang=

Fonte dati: RE.PUBLIC@POLIMI - Research Publications at Politecnico di Milano

Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2023 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Contributo in Atti di convegno
Accelerating massive MIMO in 6G communications by analog in-memory computing circuits (Mostra >>)
Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM) (Mostra >>)
In-memory neural network accelerator based on phase change memory (PCM) with one-selector/one-resistor (1S1R) structure operated in the subthreshold regime (Mostra >>)
Thermal-Induced Multi-State Memristors for Neuromorphic Engineering (Mostra >>)
Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology (Mostra >>)
Articoli su riviste
A Generalized Block-Matrix Circuit for Closed-Loop Analog In-Memory Computing (Mostra >>)
A Multilayer Neural Accelerator With Binary Activations Based on Phase-Change Memory (Mostra >>)
A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing (Mostra >>)
Hybrid 2D-CMOS microchips for memristive applications (Mostra >>)
In-memory computing with emerging memory devices: Status and outlook (Mostra >>)
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories (Mostra >>)
Process-Voltage-Temperature Variations Assessment in Energy-Aware Resistive RAM-Based FPGAs (Mostra >>)
Threshold Switching by Bipolar Avalanche Multiplication in Ovonic Chalcogenide Glasses (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2022 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Brevetti
NANOWIRE-BASED DEVICE FOR IMPLEMENTING A RESERVOIR FOR A NEURAL NETWORK (Mostra >>)
Contributi su volumi (Capitolo o Saggio)
Analogue In-Memory Computing with Resistive Switching Memories (Mostra >>)
Computing with nonvolatile memories for artificial intelligence (Mostra >>)
Contributo in Atti di convegno
A Hybrid Memristor/CMOS SNN for Implementing One-Shot Winner-Takes-All Training (Mostra >>)
Characterization of reset state through energy activation study in Ge-GST based ePCM (Mostra >>)
Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories (Mostra >>)
End-to-end modeling of variability-aware neural networks based on resistive-switching memory arrays (Mostra >>)
Experimental verification and benchmark of in-memory principal component analysis by crosspoint arrays of resistive switching memory (Mostra >>)
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference (Mostra >>)
Mitigating read-program variation and IR drop by circuit architecture in RRAM-based neural network accelerators (Mostra >>)
Modeling Environment for Ge-rich GST Phase Change Memory Cells (Mostra >>)
Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators (Mostra >>)
Status and challenges of in-memory computing for neural accelerators (Mostra >>)
Thermal switching of TiO2-based RRAM for parameter extraction and neuromorphic engineering (Mostra >>)
Monografie o trattati scientifici
Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations (Mostra >>)
Articoli su riviste
2022 roadmap on neuromorphic computing and engineering (Mostra >>)
A CMOS-memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity (Mostra >>)
An analogue in-memory ridge regression circuit with application to massive MIMO acceleration (Mostra >>)
An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories (Mostra >>)
BEOL Process Effects on ePCM Reliability (Mostra >>)
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning (Mostra >>)
HfO2-based resistive switching memory devices for neuromorphic computing (Mostra >>)
In-Memory Principal Component Analysis by Crosspoint Array of Resistive Switching Memory: A New Hardware Approach for Energy-Efficient Data Analysis in Edge Computing (Mostra >>)
Invited Tutorial: Analog Matrix Computing with Crosspoint Resistive Memory Arrays (Mostra >>)
Ionic-electronic halide perovskite memdiodes enabling neuromorphic computing with a second-order complexity (Mostra >>)
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks (Mostra >>)
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration (Mostra >>)
Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks (Mostra >>)
Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse (Mostra >>)
Redox memristors with volatile threshold switching behavior for neuromorphic computing (Mostra >>)
Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2021 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Brevetti
Dispositivo basato su nanofili per l’implementazione di un reservoir per una rete neurale (Mostra >>)
Contributi su volumi (Capitolo o Saggio)
Drift Phenomena in Phase Change Memories (Mostra >>)
Contributo in Atti di convegno
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM) (Mostra >>)
Improving Ge-rich GST ePCM reliability through BEOL engineering (Mostra >>)
Modeling of oxide-based ECRAM programming by drift-diffusion ion transport (Mostra >>)
Optimized programming algorithms for multilevel RRAM in hardware neural networks (Mostra >>)
Tackling the Low Conductance State Drift through Incremental Reset and Verify in RRAM arrays (Mostra >>)
Articoli su riviste
A Brain-Inspired Homeostatic Neuron Based on Phase-Change Memories for Efficient Neuromorphic Computing (Mostra >>)
A Drift-Resilient Hardware Implementation of Neural Accelerators Based on Phase Change Memory Devices (Mostra >>)
A Universal, Analog, In-Memory Computing Primitive for Linear Algebra Using Memristors (Mostra >>)
Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits (Mostra >>)
Brain-inspired computing via memory device physics (Mostra >>)
Combining accuracy and plasticity in convolutional neural networks based on resistive memory arrays for autonomous learning (Mostra >>)
Empirical metal-oxide RRAM device endurance and retention model for deep learning simulations (Mostra >>)
In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks (Mostra >>)
In-memory computing with resistive memory circuits: Status and outlook (Mostra >>)
Materials challenges and opportunities for brain-inspired computing (Mostra >>)
Optimization Schemes for In-Memory Linear Regression Circuit With Memristor Arrays (Mostra >>)
Redundancy and Analog Slicing for Precise In-Memory Machine Learning--Part II: Applications and Benchmark (Mostra >>)
Redundancy and Analog Slicing for Precise in-Memory Machine Learning--Part I: Programming Techniques (Mostra >>)
Standards for the Characterization of Endurance in Resistive Switching Devices (Mostra >>)
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization (Mostra >>)
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2020 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Contributi su volumi (Capitolo o Saggio)
Applications of Resistive Switching Memory as Hardware Security Primitive (Mostra >>)
Synaptic realizations based on memristive devices (Mostra >>)
Contributo in Atti di convegno
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks (Mostra >>)
A Spiking Recurrent Neural Network with Phase Change Memory Synapses for Decision Making (Mostra >>)
A bio-inspired recurrent neural network with self-adaptive neurons and PCM synapses for solving reinforcement learning tasks (Mostra >>)
Hardware implementation of PCM-based neurons with self-regulating threshold for homeostatic scaling in unsupervised learning (Mostra >>)
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices (Mostra >>)
Modeling of virgin state and forming operation in embedded phase change memory (PCM) (Mostra >>)
Articoli su riviste
A Compact Model for Stochastic Spike-Timing-Dependent Plasticity (STDP) Based on Resistive Switching Memory (RRAM) Synapses (Mostra >>)
A spiking recurrent neural network with phase change memory neurons and synapses for the accelerated solution of constraint satisfaction problems (Mostra >>)
Analytical modeling of electrochemical metallization memory device with dual-layer structure of Ag/AgInSbTe/amorphous C/Pt (Mostra >>)
Bio-Inspired Techniques in a Fully Digital Approach for Lifelong Learning (Mostra >>)
Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks (Mostra >>)
Device and Circuit Architectures for In‐Memory Computing (Mostra >>)
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories (Mostra >>)
Integration and co-design of memristive devices and algorithms for artificial intelligence (Mostra >>)
In‐Memory Eigenvector Computation in Time O (1) (Mostra >>)
Memristive and CMOS Devices for Neuromorphic Computing (Mostra >>)
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories (Mostra >>)
One-step regression and classification with cross-point resistive memory arrays (Mostra >>)
Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays (Mostra >>)
Time Complexity of In-Memory Solution of Linear Systems (Mostra >>)
Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2019 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Contributi su volumi (Capitolo o Saggio)
Brain-Inspired Memristive Neural Networks for Unsupervised Learning (Mostra >>)
Neuromorphic computing with resistive switching memory devices (Mostra >>)
Contributo in Atti di convegno
A compact model of stochastic switching in STT magnetic RAM for memory and computing (Mostra >>)
A volatile RRAM synapse for neuromorphic computing (Mostra >>)
Computing of temporal information in spiking neural networks with ReRAM synapses (Mostra >>)
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion (Mostra >>)
Energy-efficient continual learning in hybrid supervised-unsupervised neural networks with PCM synapses (Mostra >>)
Fast solution of linear systems with analog resistive switching memory (RRAM) (Mostra >>)
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices (Mostra >>)
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage (Mostra >>)
Low-energy inference machine with multilevel HfO2 RRAM arrays (Mostra >>)
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion (Mostra >>)
Monte Carlo model of resistance evolution in embedded PCM with Ge-rich GST (Mostra >>)
Phase-change memories (PCM)-Experiments and modelling: General discussion (Mostra >>)
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing (Mostra >>)
Synaptic and neuromorphic functions: General discussion (Mostra >>)
Valence change ReRAMs (VCM) - Experiments and modelling: General discussion (Mostra >>)
Articoli su riviste
A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory (Mostra >>)
Emerging neuromorphic devices (Mostra >>)
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks (Mostra >>)
Recommended Methods to Study Resistive Switching Devices (Mostra >>)
Solving matrix equations in one step with cross-point resistive arrays (Mostra >>)
Stochastic Memory Devices for Security and Computing (Mostra >>)
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices (Mostra >>)
Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks (Mostra >>)
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling (Mostra >>)
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling (Mostra >>)
manifesti v. 3.5.10 / 3.5.10
Area Servizi ICT
21/09/2023