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Information on professor
ProfessorIsella Giovanni
QualificationAssociate professor full time
Belonging DepartmentDipartimento di Fisica
Scientific-Disciplinary SectorFIS/01 - Experimental Physics
Curriculum VitaeDownload CV (43.22Kb - 15/05/2019)

Professor's office hours
Polo di Como - Via Anzani 42 - Stanza 1.5----MondayFrom 15:00
To 16:00
Professor's personal websitehttp://lness.como.polimi.it

Data source: RE.PUBLIC@POLIMI - Research Publications at Politecnico di Milano

List of publications and reserach products for the year 2021 (Show all details | Hide all details)
Type Title of the Publicaiton/Product
Conference proceedings
Self-assembled Ge-on-Si microcrystals for single photon detection (Show >>)
Journal Articles
CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes (Show >>)
Design and simulation of waveguide-integrated Ge/SiGe quantum-confined Stark effect optical modulator based on adiabatic coupling with SiGe waveguide (Show >>)
Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states (Show >>)

List of publications and reserach products for the year 2020 (Show all details | Hide all details)
Type Title of the Publicaiton/Product
Dispositivo sensore di radiazione elettromagnetica a doppio fotodiodo (Show >>)
Sensore ottico iperspettrale a semiconduttore (Show >>)
Journal Articles
Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals (Show >>)
Characterization of integrated waveguides by atomic-force-microscopy-assisted mid-infrared imaging and spectroscopy (Show >>)
Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting (Show >>)
Ge-rich graded SiGe waveguides and interferometers from 5 to 11 µm wavelength range (Show >>)
Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111) (Show >>)
On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 μm Wavelength (Show >>)
Optical modulation in Ge-rich SiGe waveguides in the mid-infrared wavelength range up to 11 µm (Show >>)
Probing the in-plane electron spin polarization in Ge/ Si0.15Ge0.85 multiple quantum wells (Show >>)
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates (Show >>)
Solid-state dewetting dynamics of amorphous ge thin films on silicon dioxide substrates (Show >>)
Spin-charge interconversion in heterostructures based on group-IV semiconductors (Show >>)

List of publications and reserach products for the year 2019 (Show all details | Hide all details)
Type Title of the Publicaiton/Product
Abstract in Atti di convegno
Field-Resolved Detection of the Temporal Response of a Mid-Infrared Plasmonic Antenna (Show >>)
Field-resolved response of plasmonic antennas (Show >>)
Ge/SiGe asymmetric quantum wells for second harmonic generation in the mid-infrared (Show >>)
Conference proceedings
Broadband Mid-IR On-Chip Fourier-Transform Spectrometer (Show >>)
Ge-rich SiGe-based wideband polarization insensitive photonic platform for mid-infrared free-space communications (Show >>)
Ge-rich graded-index Si1-xGex racetrack resonators for long-wave infrared photonics (Show >>)
Mid-infrared integrated wideband duel-polarization Fourier-transform spectrometer (Show >>)
Spin transport and spin-charge interconversion phenomena in Ge-based structures (Show >>)
Journal Articles
Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM (Show >>)
Broadband integrated racetrack ring resonators for long-wave infrared photonics (Show >>)
Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM (Show >>)
Design and Simulation of Ge-on-Si Photodetectors with Electrically Tunable Spectral Response (Show >>)
Doping dependence of the electron spin diffusion length in germanium (Show >>)
Effect of thermal annealing on the interface quality of Ge/Si heterostructures (Show >>)
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers (Show >>)
Ge/SiGe parabolic quantum wells (Show >>)
On-chip Fourier-transform spectrometer based on spatial heterodyning tuned by thermo-optic effect (Show >>)
Plasmon-enhanced Ge-based metal-semiconductor-metal photodetector at near-IR wavelengths (Show >>)
Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects (Show >>)
Strain analysis of a Ge micro disk using precession electron diffraction (Show >>)
Ultra-wideband Ge-rich silicon germanium mid-infrared polarization rotator with mode hybridization flattening (Show >>)
Vertical Ge-Si Nanowires with Suspended Graphene Top Contacts as Dynamically Tunable Multispectral Photodetectors (Show >>)
Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range (Show >>)

List of publications and reserach products for the year 2018 (Show all details | Hide all details)
Type Title of the Publicaiton/Product
Abstract in Atti di convegno
A compact Ge-rich graded-index SiGe platform with broadband low-loss propagation in the mid infrared (Show >>)
Ge-rich graded-index Si1-xGex devices for MID-IR integrated photonics (Show >>)
Mid-IR integrated cavity based on Ge-rich graded SiGe waveguides with lateral Bragg grating (Show >>)
Conference proceedings
7.5-μm wavelength fiber-chip grating couplers for Ge-rich SiGe photonics integrated circuits (Show >>)
Components for Integrated Ge on Si for Mid-Infrared Photonic Sensors (Show >>)
Ge-Rich Graded-Index SiGe Alloys: Exploring a Versatile Platform for mid-IR Photonics (Show >>)
Ge-rich SiGe photonic-integrated circuits for mid-IR spectroscopy (Show >>)
Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR (Show >>)
Journal Articles
Benchmarking the Use of Heavily Doped Ge for Plasmonics and Sensing in the Mid-Infrared (Show >>)
Dislocation-free SiGe/Si heterostructures (Show >>)
Effective g factor of 2D holes in strained Ge quantum wells (Show >>)
Germanium-based integrated photonics from near- to mid-infrared applications (Show >>)
Graded SiGe waveguides with broadband low-loss propagation in the mid infrared (Show >>)
Integrated broadband dual-polarization Ge-rich SiGe mid-infrared Fourier-transform spectrometer (Show >>)
Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure (Show >>)
Magnetotransport in Bi2Se3 thin films epitaxially grown on Ge(111) (Show >>)
Mid-infrared sensing between 5.2 and 6.6 μm wavelengths using Ge-rich SiGe waveguides [Invited] (Show >>)
Modeling the photo-induced inverse spin-Hall effect in Pt/semiconductor junctions (Show >>)
On-chip Bragg grating waveguides and Fabry-Perot resonators for long-wave infrared operation up to 8.4 µm (Show >>)
Paramagnon-Enhanced Spin Currents in a Lattice near the Curie Point (Show >>)
Plasmonic mid-infrared third harmonic generation in germanium nanoantennas (Show >>)
Spin-to-charge conversion for hot photoexcited electrons in germanium (Show >>)
Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime (Show >>)
Wideband Ge-Rich SiGe polarization-insensitive waveguides for mid-infrared free-space communications (Show >>)

List of publications and reserach products for the year 2017 (Show all details | Hide all details)
Type Title of the Publicaiton/Product
Abstract in Atti di convegno
Charge carrier dynamics by secondary electron detection in ultrafast scanning electron microscopy (Show >>)
Charge carrier dynamics at doped silicon surface by ultrafast scanning electron microscopy (Show >>)
Quantum confined Stark effect electroabsorption modulator on a SOI platform (Show >>)
Conference proceedings
Broadband mid infrared photonic integrated components using a Ge-rich SiGe platform (Show >>)
Design of mid-IR integrated cavity based on Ge-rich graded SiGe waveguides (Show >>)
Ge-rich SiGe waveguides for mid-infrared photonics (Show >>)
Germanium Nanoantennas for Plasmon-Enhanced Third Harmonic Generation in the Mid Infrared (Show >>)
Germanium-on-silicon waveguides for mid-infrared photonic sensing chips (Show >>)
Heavily-doped germanium on silicon with activated doping exceeding 10^20cm^-3 as an alternative to gold for mid-infrared plasmonics (Show >>)
Integrated germanium-on-silicon waveguides for mid-infrared photonic sensing chips (Show >>)
Mid-infrared n-Ge on Si plasmonic based microbolometer sensors (Show >>)
Mid-infrared third-harmonic emission from heavily-doped germanium plasmonic nanoantennas (Show >>)
N-Ge on Si for mid-infrared plasmonic sensors (Show >>)
Nonlinear properties of Ge-rich SiGe waveguides (Show >>)
Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon (Show >>)
Pure spin currents in Ge probed by inverse spin-Hall effect (Show >>)
Silicon nitride waveguide-integrated Ge/SiGe quantum wells optical modulator (Show >>)
Third order nonlinear optical properties of Ge-Rich SiGe waveguides (Show >>)
Journal Articles
Electro-refraction in standard and symmetrically coupled Ge/SiGe quantum wells (Show >>)
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) (Show >>)
First stages of Ni reaction with the Si(Ge) alloy (Show >>)
Functionalization of Scanning Probe Tips with Epitaxial Semiconductor Layers (Show >>)
Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics (Show >>)
Imaging spin diffusion in germanium at room temperature (Show >>)
In situ ohmic contact formation for n-type Ge via non-equilibrium processing (Show >>)
Low-loss Ge-rich Si0.2Ge0.8 waveguides for mid-infrared photonics (Show >>)
Nonlinear Properties of Ge-rich Si1-xGexMaterials with Different Ge Concentrations (Show >>)
Optical generation of pure spin currents at the indirect gap of bulk Si (Show >>)
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing (Show >>)
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates (Show >>)
Spin-Hall Voltage over a Large Length Scale in Bulk Germanium (Show >>)
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures (Show >>)
Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates (Show >>)
Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching (Show >>)
Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid-infrared spectroscopy (Show >>)
manifesti v. 3.4.18 / 3.4.18
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