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Le informazioni sulla didattica, sulla ricerca e sui compiti istituzionali riportate in questa pagina sono certificate dall'Ateneo; ulteriori informazioni, redatte a cura del docente, sono disponibili sulla pagina web personale e nel curriculum vitae indicati nella scheda.
Informazioni sul docente
DocenteIsella Giovanni
QualificaProfessore associato a tempo pieno
Dipartimento d'afferenzaDipartimento di Fisica
Settore Scientifico DisciplinareFIS/01 - Fisica Sperimentale
Curriculum VitaeScarica il CV (43.22Kb - 15/05/2019)

Orario di ricevimento
Polo di Como - Via Anzani 42 - Stanza 1.5----LunedìDalle 15:00
Alle 16:00
Pagina web redatta a cura del docentehttp://lness.como.polimi.it

Fonte dati: RE.PUBLIC@POLIMI - Research Publications at Politecnico di Milano

Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2021 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Articoli su riviste
Design and simulation of waveguide-integrated Ge/SiGe quantum-confined Stark effect optical modulator based on adiabatic coupling with SiGe waveguide (Mostra >>)

Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2020 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Articoli su riviste
Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals (Mostra >>)
Characterization of integrated waveguides by atomic-force-microscopy-assisted mid-infrared imaging and spectroscopy (Mostra >>)
Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting (Mostra >>)
Ge-rich graded SiGe waveguides and interferometers from 5 to 11 µm wavelength range (Mostra >>)
Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111) (Mostra >>)
On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 μm Wavelength (Mostra >>)
Optical modulation in Ge-rich SiGe waveguides in the mid-infrared wavelength range up to 11 µm (Mostra >>)
Probing the in-plane electron spin polarization in Ge/ Si0.15Ge0.85 multiple quantum wells (Mostra >>)
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates (Mostra >>)
Spin-charge interconversion in heterostructures based on group-IV semiconductors (Mostra >>)

Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2019 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Abstract in Atti di convegno
Field-Resolved Detection of the Temporal Response of a Mid-Infrared Plasmonic Antenna (Mostra >>)
Field-resolved response of plasmonic antennas (Mostra >>)
Ge/SiGe asymmetric quantum wells for second harmonic generation in the mid-infrared (Mostra >>)
Contributo in Atti di convegno
Broadband Mid-IR On-Chip Fourier-Transform Spectrometer (Mostra >>)
Ge-rich SiGe-based wideband polarization insensitive photonic platform for mid-infrared free-space communications (Mostra >>)
Ge-rich graded-index Si1-xGex racetrack resonators for long-wave infrared photonics (Mostra >>)
Mid-infrared integrated wideband duel-polarization Fourier-transform spectrometer (Mostra >>)
Spin transport and spin-charge interconversion phenomena in Ge-based structures (Mostra >>)
Articoli su riviste
Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM (Mostra >>)
Broadband integrated racetrack ring resonators for long-wave infrared photonics (Mostra >>)
Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM (Mostra >>)
Design and Simulation of Ge-on-Si Photodetectors with Electrically Tunable Spectral Response (Mostra >>)
Doping dependence of the electron spin diffusion length in germanium (Mostra >>)
Effect of thermal annealing on the interface quality of Ge/Si heterostructures (Mostra >>)
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers (Mostra >>)
Ge/SiGe parabolic quantum wells (Mostra >>)
On-chip Fourier-transform spectrometer based on spatial heterodyning tuned by thermo-optic effect (Mostra >>)
Plasmon-enhanced Ge-based metal-semiconductor-metal photodetector at near-IR wavelengths (Mostra >>)
Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects (Mostra >>)
Strain analysis of a Ge micro disk using precession electron diffraction (Mostra >>)
Ultra-wideband Ge-rich silicon germanium mid-infrared polarization rotator with mode hybridization flattening (Mostra >>)
Vertical Ge-Si Nanowires with Suspended Graphene Top Contacts as Dynamically Tunable Multispectral Photodetectors (Mostra >>)
Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range (Mostra >>)

Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2018 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Abstract in Atti di convegno
A compact Ge-rich graded-index SiGe platform with broadband low-loss propagation in the mid infrared (Mostra >>)
Ge-rich graded-index Si1-xGex devices for MID-IR integrated photonics (Mostra >>)
Mid-IR integrated cavity based on Ge-rich graded SiGe waveguides with lateral Bragg grating (Mostra >>)
Contributo in Atti di convegno
7.5-μm wavelength fiber-chip grating couplers for Ge-rich SiGe photonics integrated circuits (Mostra >>)
Components for Integrated Ge on Si for Mid-Infrared Photonic Sensors (Mostra >>)
Ge-Rich Graded-Index SiGe Alloys: Exploring a Versatile Platform for mid-IR Photonics (Mostra >>)
Ge-rich SiGe photonic-integrated circuits for mid-IR spectroscopy (Mostra >>)
Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR (Mostra >>)
Articoli su riviste
Benchmarking the Use of Heavily Doped Ge for Plasmonics and Sensing in the Mid-Infrared (Mostra >>)
Dislocation-free SiGe/Si heterostructures (Mostra >>)
Effective g factor of 2D holes in strained Ge quantum wells (Mostra >>)
Germanium-based integrated photonics from near- to mid-infrared applications (Mostra >>)
Graded SiGe waveguides with broadband low-loss propagation in the mid infrared (Mostra >>)
Integrated broadband dual-polarization Ge-rich SiGe mid-infrared Fourier-transform spectrometer (Mostra >>)
Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure (Mostra >>)
Magnetotransport in Bi2Se3 thin films epitaxially grown on Ge(111) (Mostra >>)
Mid-infrared sensing between 5.2 and 6.6 μm wavelengths using Ge-rich SiGe waveguides [Invited] (Mostra >>)
Modeling the photo-induced inverse spin-Hall effect in Pt/semiconductor junctions (Mostra >>)
On-chip Bragg grating waveguides and Fabry-Perot resonators for long-wave infrared operation up to 8.4 µm (Mostra >>)
Paramagnon-Enhanced Spin Currents in a Lattice near the Curie Point (Mostra >>)
Plasmonic mid-infrared third harmonic generation in germanium nanoantennas (Mostra >>)
Spin-to-charge conversion for hot photoexcited electrons in germanium (Mostra >>)
Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime (Mostra >>)
Wideband Ge-Rich SiGe polarization-insensitive waveguides for mid-infrared free-space communications (Mostra >>)

Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2017 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Abstract in Atti di convegno
Charge carrier dynamics by secondary electron detection in ultrafast scanning electron microscopy (Mostra >>)
Charge carrier dynamics at doped silicon surface by ultrafast scanning electron microscopy (Mostra >>)
Quantum confined Stark effect electroabsorption modulator on a SOI platform (Mostra >>)
Contributo in Atti di convegno
Broadband mid infrared photonic integrated components using a Ge-rich SiGe platform (Mostra >>)
Design of mid-IR integrated cavity based on Ge-rich graded SiGe waveguides (Mostra >>)
Ge-rich SiGe waveguides for mid-infrared photonics (Mostra >>)
Germanium Nanoantennas for Plasmon-Enhanced Third Harmonic Generation in the Mid Infrared (Mostra >>)
Germanium-on-silicon waveguides for mid-infrared photonic sensing chips (Mostra >>)
Heavily-doped germanium on silicon with activated doping exceeding 10^20cm^-3 as an alternative to gold for mid-infrared plasmonics (Mostra >>)
Integrated germanium-on-silicon waveguides for mid-infrared photonic sensing chips (Mostra >>)
Mid-infrared n-Ge on Si plasmonic based microbolometer sensors (Mostra >>)
Mid-infrared third-harmonic emission from heavily-doped germanium plasmonic nanoantennas (Mostra >>)
N-Ge on Si for mid-infrared plasmonic sensors (Mostra >>)
Nonlinear properties of Ge-rich SiGe waveguides (Mostra >>)
Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon (Mostra >>)
Pure spin currents in Ge probed by inverse spin-Hall effect (Mostra >>)
Silicon nitride waveguide-integrated Ge/SiGe quantum wells optical modulator (Mostra >>)
Third order nonlinear optical properties of Ge-Rich SiGe waveguides (Mostra >>)
Articoli su riviste
Electro-refraction in standard and symmetrically coupled Ge/SiGe quantum wells (Mostra >>)
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) (Mostra >>)
First stages of Ni reaction with the Si(Ge) alloy (Mostra >>)
Functionalization of Scanning Probe Tips with Epitaxial Semiconductor Layers (Mostra >>)
Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics (Mostra >>)
Imaging spin diffusion in germanium at room temperature (Mostra >>)
In situ ohmic contact formation for n-type Ge via non-equilibrium processing (Mostra >>)
Low-loss Ge-rich Si0.2Ge0.8 waveguides for mid-infrared photonics (Mostra >>)
Nonlinear Properties of Ge-rich Si1-xGexMaterials with Different Ge Concentrations (Mostra >>)
Optical generation of pure spin currents at the indirect gap of bulk Si (Mostra >>)
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing (Mostra >>)
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates (Mostra >>)
Spin-Hall Voltage over a Large Length Scale in Bulk Germanium (Mostra >>)
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures (Mostra >>)
Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates (Mostra >>)
Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching (Mostra >>)
Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid-infrared spectroscopy (Mostra >>)
manifesti v. 3.4.8 / 3.4.8
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